TP65H050G4WS

Afbeeldingen zijn alleen ter referentie
Onderdeel nummer
TP65H050G4WS
Fabrikant
Transphorm
Categorieën
MOSFET
RoHS
Data papier
Omschrijving
MOSFET GAN FET 650V 34A TO247

bestek

Fabrikant
Transphorm
Categorieën
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
34 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-247-3
Packaging
Bulk
Pd - Power Dissipation
119 W
Qg - Gate Charge
24 nC
Rds On - Drain-Source Resistance
60 mOhms
Technology
SI
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
4.8 V

Laatste Recensies

Everything is excellent! recommend this seller!

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Works. Recommend

Packed medium, in transit could поврелиться. But since it's safe, work perfectly

and whole all right. the features no more функционалу check.

Mensen die TP65H050G4WS hebben bekeken en vervolgens hebben gekocht

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