TP65H070LSG-TR

Afbeeldingen zijn alleen ter referentie
Onderdeel nummer
TP65H070LSG-TR
Fabrikant
Transphorm
Categorieën
RF JFET Transistors
RoHS
Data papier
Omschrijving
RF JFET Transistors GAN FET 650V 25A PQFN88

bestek

Fabrikant
Transphorm
Categorieën
RF JFET Transistors
Id - Continuous Drain Current
25 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
PQFN-8
Packaging
Cut Tape, Reel
Pd - Power Dissipation
96 W
Technology
GaN
Transistor Polarity
N-Channel
Transistor Type
HEMT
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Breakdown Voltage
- 20 V, + 20 V

Laatste Recensies

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

High Quality driver, works excellent. It came to Moscow for 7 days.

Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!

Good material. Great seller, efficient and insurance. Ok

I received the product right, thank you very much 2018/12/03 ★★★★★

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